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Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

机译：电荷载流子迁移率和漂移速度饱和度的测量在高电阻下，<111>和<100>晶体取向的体硅中领域

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Becker, Julian; Fretwurst, Eckhart; Klanner, Robert;
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年度 2010
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原文格式 PDF
正文语种 {"code":"en","name":"English","id":9}
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1. Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields [J] . Julian Becker, Eckhart Fretwurst, Robert Klanner Solid-State Electronics . 2011,第1期

机译：在高电场下测量<111>和<100>晶体取向的体硅中的载流子迁移率和漂移速度饱和度
2. Saturation of charge carrier velocity with increasing electric fields: Theoretical investigations for pure organic crystals - art. no. 205104 [J] . Kenkre VM., Parris PE. Physical Review, B. Condensed Matter . 2002,第20期

机译：电场增加时电荷载流子速度的饱和：纯有机晶体的理论研究-艺术。没有。 205104
3. Saturation of charge carrier velocity with increasing electric fields: Theoretical investigations for pure organic crystals - art. no. 205104 [J] . Kenkre VM., Parris PE. Physical Review, B. Condensed Matter . 2002,第20期

机译：电场增加时电荷载流子速度的饱和：纯有机晶体的理论研究-艺术。没有。 205104
4. High-field carrier drift velocity measurements in silicon by a time-of-flight technique [C] . Norris C.B. Jr., Gibbsons J.F. Electron Devices Meeting, 1966 International . -1

机译：通过飞行时间技术测量硅中的高场载流子漂移速度
5. Chemical characterization and charge carrier dynamics of crystalline silicon(111) surfaces modified with surface-bound organic functional groups. [D] . Webb, Lauren J. 2005

机译：用表面结合的有机官能团修饰的结晶硅（111）表面的化学表征和电荷载流子动力学。
6. Conformational Landscapes of Ubiquitin Cytochrome c and Myoglobin: Uniform Field Ion Mobility Measurements in Helium and Nitrogen Drift Gas [O] . Jody C. May, Ewa Jurneczko, Sarah M. Stow, -1

机译：泛素细胞色素c和肌红蛋白的构象景观：氦气和氮气流中均匀场离子迁移率的测量
7. Precision measurement of the carrier drift velocities in <100> silicon [O] . Scharf, C., Klanner, R. 2015

机译：精确测量<100>硅中的载流子漂移速度
8. Acoustoelectric Oscillations, Current Saturation and Electron Drift Mobility in Cadmium Sulphide Crystals [R] . Rannesrad, A. 1966

机译：硫化镉晶体中的声电振荡，电流饱和和电子漂移迁移率

Measurements of charge carrier mobilities and drift velocity saturation in bulk silicon of <111> and <100> crystal orientation at high electric fields

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